1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

Abstract:

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1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

901-904

DOI:

10.4028/www.scientific.net/MSF.483-485.901

Citation:

S. Krishnaswami et al., "1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs", Materials Science Forum, Vols. 483-485, pp. 901-904, 2005

Online since:

May 2005

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Price:

$35.00

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