1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

Sumi Krishnaswami; Anant K. Agarwal; Craig Capell; Jim Richmond; Sei Hyung Ryu; John W. Palmour; S. Balachandran; T. Paul Chow; Stephen Baynes; Bruce  Geil; Kenneth A. Jones; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.483-485.901

Paper Titles

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
p.889

BV_CEO Versus BV_CBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
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Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures
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1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
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A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
p.905

Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
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Optimisation of Heterostructure Bipolar Transistors in SiC
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Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-4851000 V, 30 A SiC Bipolar Junction Transistors and...

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs

Abstract:

1000 V Bipolar Junction Transistor and integrated Darlington pairs with high current gain have been developed in 4H-SiC. The 3.38 mm x 3.38 mm BJT devices with an active area of 3 mm x 3 mm showed a forward on-current of 30 A, which corresponds to a current density of 333 A/cm2, at a forward voltage drop of 2 V. A common-emitter current gain of 40 was measured on these devices. A specific on-resistance of 6.0 mW-cm2 was observed at room temperature. The onresistance increases at higher temperatures, while the current gain decreases to 30 at 275°C. In addition, an integrated Darlington pair with an active area of 3 mm x 3 mm showed a collector current of 30 A at a forward drop of 4 V at room temperature. A current gain of 2400 was measured on these devices. A BVCEO of 1000 V was measured on both of these devices.

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Materials Science Forum (Volumes 483-485)

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901-904

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.901

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May 2005

Authors:

Sumi Krishnaswami, Anant K. Agarwal, Craig Capell, Jim Richmond, Sei Hyung Ryu, John W. Palmour, S. Balachandran, T. Paul Chow, Stephen Baynes, Bruce Geil, Kenneth A. Jones, Charles Scozzie

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Bipolar Junction Transistor (BJT), Current Gain, Darlington Pairs

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References

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