Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures

Hyung Seok Lee; Martin Domeij; Erik Danielsson; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.483-485.897

Paper Titles

Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
p.881

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
p.885

Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
p.889

BV_CEO Versus BV_CBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
p.893

Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures
p.897

1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
p.901

A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
p.905

Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs
p.909

Optimisation of Heterostructure Bipolar Transistors in SiC
p.913

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Electrical Characteristics of 4H-SiC BJTs at...

Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2004

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

897-900

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.897

Citation:

Cite this paper

Online since:

May 2005

Authors:

Hyung Seok Lee, Martin Domeij, Erik Danielsson, Carl Mikael Zetterling, Mikael Östling

Keywords:

4H-SiC, Bipolar Junction Transistor (BJT), Junction Temperature, Self-Heating

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] B. J. Baliga, IEEE Trans. Electron Devices Vol.43 (1992), p.1717.

Google Scholar

[2] T.P. Chow: 1st International Workshop on ultra-low loss Power Device Technology (2000), p.117.

Google Scholar

[3] W. Liu, E. Danielsson, C-M. Zetterling, and M. Östling B. J. Baliga, , Mater. Res. Soc. Symp. Proc. Vol. 433-436 (2002), pp.781-784

Google Scholar

[4] M. Domeij, U. Zimmermann, D. Aberg, J. Osterman, A. Hallen, and M. Östling, Mater. Res. Soc. Symp. Proc. Vol. 433-436 (2003), pp.847-850

Google Scholar

[5] S. P. Marsh, IEEE Trans. Electron Devices Vol.47 (2000), p.288.

Google Scholar

[6] E. Danielsson, C-M. Zetterling, M. Östling, U. Forsberg, and E. Janzen, Mater. Res. Soc. Symp. Proc. Vol. 389-393 (2002), pp.1337-1340

Google Scholar

[7] I. Perez-Würfl, J. Torvik and B. Van Zeghbroeck, Mater. Res. Soc. Symp. Proc. Vol. 457-460 (2004), pp.1121-1124

Google Scholar

[8] S. Nuttinck, E. Gebara, J. Laskar, and H-M. Harris, IEEE Trans. Microw. Theory Vol.49 (2001), pp.2413-2420

Google Scholar