Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET

Makoto Mizukami; Osamu Takikawa; Seiji Imai; Kozo Kinoshita; Tetsuo Hatakeyama; Tomokazu Domon; Takashi Shinohe

doi:10.4028/www.scientific.net/MSF.483-485.881

Paper Titles

Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
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High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
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Wannier-Stark Localization Effects in 6H-SiC JFETs
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Effective Edge Termination Design in SiC VJFET
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Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
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BV_CEO Versus BV_CBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
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Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures
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Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET

Abstract:

A 4H-SiC 600 V class Deep-Implanted gate Vertical JFET (DI-VJFET) is examined. The DI-VJFET exhibited a specific on-resistance of 13 mΩcm2, drain current of 5 A, and a blocking-voltage of 600 V. In this paper, the very high temperature dependence (R.T.~ 400 oC) of the I-V characteristics is measured and the dominant factor of the on-resistance and the blocking-voltage is discussed. Moreover, the switching waveform of SiC DI-VJFET with SiC SBD is measured by using a half bridge, double-pulse circuit with inductive load at R.T. and 200 oC. The turn-off time is 300 ns at an inductance of 4 mH and an external gate resistance of 100 Ω.