Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET

Abstract:

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A 4H-SiC 600 V class Deep-Implanted gate Vertical JFET (DI-VJFET) is examined. The DI-VJFET exhibited a specific on-resistance of 13 mΩcm2, drain current of 5 A, and a blocking-voltage of 600 V. In this paper, the very high temperature dependence (R.T.~ 400 oC) of the I-V characteristics is measured and the dominant factor of the on-resistance and the blocking-voltage is discussed. Moreover, the switching waveform of SiC DI-VJFET with SiC SBD is measured by using a half bridge, double-pulse circuit with inductive load at R.T. and 200 oC. The turn-off time is 300 ns at an inductance of 4 mH and an external gate resistance of 100 Ω.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

881-884

DOI:

10.4028/www.scientific.net/MSF.483-485.881

Citation:

M. Mizukami et al., "Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET", Materials Science Forum, Vols. 483-485, pp. 881-884, 2005

Online since:

May 2005

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Price:

$35.00

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