Wannier-Stark Localization Effects in 6H-SiC JFETs

Abstract:

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The dependence of short-circuit photo-current on the voltage applied to the source-gate (or drain-gate) junction Vg was studied. One should consider the fact that the photo-current begins to drop with voltage exceeding certain threshold value. Thus the 6H-SiC JFET behaves uncommonly. Moreover Isd ~Vg dependence shows a drop Isd to zero at a condition that there is a non-pinched-off part of the channel. For a comparison parallel investigations were conducted with two industrial Si JFETs with a structure similar to that of 6H-SiC JFET under study. The results obtained for Si JFETs are trivial for photocurrent and Isd. We believe that the effects observed in 6H-SiC JFET should be attributed to the Wannier-Stark localization regime.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

873-876

DOI:

10.4028/www.scientific.net/MSF.483-485.873

Citation:

V. I. Sankin et al., "Wannier-Stark Localization Effects in 6H-SiC JFETs", Materials Science Forum, Vols. 483-485, pp. 873-876, 2005

Online since:

May 2005

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Price:

$35.00

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