Wannier-Stark Localization Effects in 6H-SiC JFETs

Vladimir Ilich Sankin; Pavel P. Shkrebiy; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.483-485.873

Paper Titles

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Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
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Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
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High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
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Wannier-Stark Localization Effects in 6H-SiC JFETs
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Effective Edge Termination Design in SiC VJFET
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Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Wannier-Stark Localization Effects in 6H-SiC JFETs

Wannier-Stark Localization Effects in 6H-SiC JFETs

Abstract:

The dependence of short-circuit photo-current on the voltage applied to the source-gate (or drain-gate) junction Vg was studied. One should consider the fact that the photo-current begins to drop with voltage exceeding certain threshold value. Thus the 6H-SiC JFET behaves uncommonly. Moreover Isd ~Vg dependence shows a drop Isd to zero at a condition that there is a non-pinched-off part of the channel. For a comparison parallel investigations were conducted with two industrial Si JFETs with a structure similar to that of 6H-SiC JFET under study. The results obtained for Si JFETs are trivial for photocurrent and Isd. We believe that the effects observed in 6H-SiC JFET should be attributed to the Wannier-Stark localization regime.