Broadband RF SiC MESFET Power Amplifiers

Abstract:

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We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers University and Lateral Epitaxy SiC MESFETs fabricated at AMDS AB. When optimized transistors are available they will be used in the design of amplifiers for a 100 – 500 MHz multifunction EW system.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

857-860

DOI:

10.4028/www.scientific.net/MSF.483-485.857

Citation:

R. Jonsson and S. Rudner, "Broadband RF SiC MESFET Power Amplifiers", Materials Science Forum, Vols. 483-485, pp. 857-860, 2005

Online since:

May 2005

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Price:

$35.00

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