Broadband RF SiC MESFET Power Amplifiers

Rolf Jonsson; Staffan Rudner

doi:10.4028/www.scientific.net/MSF.483-485.857

Paper Titles

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
p.841

Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices
p.845

Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETs
p.849

High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
p.853

Broadband RF SiC MESFET Power Amplifiers
p.857

Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
p.861

Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
p.865

High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
p.869

Wannier-Stark Localization Effects in 6H-SiC JFETs
p.873

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Broadband RF SiC MESFET Power Amplifiers

Broadband RF SiC MESFET Power Amplifiers

Abstract:

We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers University and Lateral Epitaxy SiC MESFETs fabricated at AMDS AB. When optimized transistors are available they will be used in the design of amplifiers for a 100 – 500 MHz multifunction EW system.