Paper Titles
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
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Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
p.865
High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
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Wannier-Stark Localization Effects in 6H-SiC JFETs
p.873
Effective Edge Termination Design in SiC VJFET
p.877
Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFET
p.881
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
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Effective Edge Termination Design in SiC VJFET

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

877-880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.877

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Online since:

May 2005

Authors:

Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Konstantin Vassilevski, C. Mark Johnson

Keywords:

Edge Termination, Junction Termination Extension (JTE), Optimization, TCAD, Vertical Junction Field Effect Transistor (VJFET)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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