Optimisation of Heterostructure Bipolar Transistors in SiC

Abstract:

Article Preview

We present the results of a simulation study on the behaviour of 3C-SiC bipolar transistors fabricated using a 6H-SiC heterojunction emitter. We show that despite the potential barrier originating in the discontinuity of the conduction bands, that npn devices offer a higher common emitter gain in comparison to pnp devices. The base voltage corresponding to the maximum gain of the device is controlled by the tunnelling of carriers across the collector-base junction and is different for both npn and pnp devices.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

913-916

DOI:

10.4028/www.scientific.net/MSF.483-485.913

Citation:

C. C. Chen et al., "Optimisation of Heterostructure Bipolar Transistors in SiC", Materials Science Forum, Vols. 483-485, pp. 913-916, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.