Optimisation of Heterostructure Bipolar Transistors in SiC
We present the results of a simulation study on the behaviour of 3C-SiC bipolar transistors fabricated using a 6H-SiC heterojunction emitter. We show that despite the potential barrier originating in the discontinuity of the conduction bands, that npn devices offer a higher common emitter gain in comparison to pnp devices. The base voltage corresponding to the maximum gain of the device is controlled by the tunnelling of carriers across the collector-base junction and is different for both npn and pnp devices.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
C. C. Chen et al., "Optimisation of Heterostructure Bipolar Transistors in SiC", Materials Science Forum, Vols. 483-485, pp. 913-916, 2005