Design, Fabrication and Characterization of 1.5 mΩcm₂, 800 V 4H-SiC n-Type Schottky Barrier Diodes

Abstract:

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 941-944
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.941
• Online since: May 2005
• Authors: M. Furno, F. Bonani, G. Ghione, Sergio Ferrero, Samuele Porro, P. Mandracci, Luciano Scaltrito, G. Richieri, Denis Perrone, Luigi Merlin
• Keywords: 4H-SiC Power Device, Characterization, Fabrication, Physic Based Simulation, Schottky Diode, Temperature Modeling

References

[1] E. Bellotti et al.: J. Appl. Phys., Vol. 87, No. 8 (2000), p.3864.

[2] G. L. Harris: Properties of Silicon Carbide (INSPEC, U.K. 1995).

[3] M. Bakowski, U. Gustafsson, and U. Lindefelt: Phys. Stat. Sol. (a), Vol. 162 (1997), p.421.

[4] M. Ikeda, H. Matsunami, and T. Tanaka: Phys. Rev. B, Vol. 22 (1980), p.2842.

[5] D. M. Caughey and R. E. Thomas: Proc. IEEE, vol. 55 (1967), p.2192.

[6] H. E. Nilsson, U. Sannemo, and C. S. Petersson: J. Appl. Phys., Vol. 80, No. 6 (1996), p.3356.

[7] I. A. Khan and A. Cooper, Jr.: IEEE Trans. Electron Devices, Vol. 47, No. 2 (2000), p.269.

[8] N. G. Wright et al.: IEE Colloquium on Development in Power Semiconductor Devices (1996), p.6/1.

[9] D. Defives et al.: IEEE Trans. Electron Devices, Vol. 46, No. 3 (1999), p.449.

[10] J. Crofton and S. Sriram: IEEE Trans. Electron Devices, Vol. 43, No. 12 (1996), p.2305.

[11] L. Scaltrito et al.: Mater. Sci. Forum, Vol. 433-436 (2003), p.455.