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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Numerical Analysis of SiC Merged PiN Schottky...

Numerical Analysis of SiC Merged PiN Schottky Diodes

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

949-952

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.949

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Online since:

May 2005

Authors:

T. Ayalew, Sang Cheol Kim, Tibor Grasser, Siegfried Selberherr

Keywords:

Leakage Current, MPS Diode, Power Rectifier, Silicon Carbide (SiC), Simulation, Switching Speed

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] P. G. Neudeck, in the VLSI Handbook, CRC Press and IEEE Press (2000), p.6.1.

[2] R. Singh et al., IEEE Trans.Electron Devices Vol. 49 (2002), p.665.

[3] Minimos-NT, Device and Circuit Simulator, User's Guide, Institute for Microelectronics, TUVienna, Austria (2002), http://www.iue.tuwien.ac.at/mmnt/.

[4] R. Singh et al., in Proceedings of the 12th International Symposium on Power Semiconductor Devices and ICs (2000), p.101.

[5] A. Hefner Jr. et al., in Conference Record of the 2000 IEEE Industry Applications Conference Vol. 5 (2000), p.2948.