Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films

Peter A. Losee; Can Hua Li; Joseph Seiler; Robert E. Stahlbush; T. Paul Chow; I. Bhat; Ronald J. Gutmann

doi:10.4028/www.scientific.net/MSF.483-485.961

Paper Titles

Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
p.945

Numerical Analysis of SiC Merged PiN Schottky Diodes
p.949

New High-Voltage Unipolar Mode p⁺ Si/n^– 4H-SiC Heterojunction Diode
p.953

SiC Super Junction Power Devices: Modeling and Analysis
p.957

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
p.961

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV
p.977

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Electrical Characteristics and Reliability of...

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films

Abstract:

4H-SiC pin diodes fabricated on epitaxial films grown in-house on various substrates along with devices fabricated on commercial epi-material are presented. Defects have been observed using electroluminescence imaging and are correlated with device electrical performance. Most diodes fabricated with in-house epi-layers up to 25µm thick show relatively stable forward biased operation, although stacking fault propagation has been confirmed in all samples using electroluminescence imaging. Significant stacking fault propagation induced in the vicinity of testing probes has been observed and resulting design considerations are discussed.

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Materials Science Forum (Volumes 483-485)

Pages:

961-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.961

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Online since:

May 2005

Authors:

Peter A. Losee, Can Hua Li, Joseph Seiler, Robert E. Stahlbush, T. Paul Chow, I. Bhat, Ronald J. Gutmann

Keywords:

4H-SiC, PiN Diode, Stacking Fault

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