Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films

Abstract:

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4H-SiC pin diodes fabricated on epitaxial films grown in-house on various substrates along with devices fabricated on commercial epi-material are presented. Defects have been observed using electroluminescence imaging and are correlated with device electrical performance. Most diodes fabricated with in-house epi-layers up to 25µm thick show relatively stable forward biased operation, although stacking fault propagation has been confirmed in all samples using electroluminescence imaging. Significant stacking fault propagation induced in the vicinity of testing probes has been observed and resulting design considerations are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

961-964

DOI:

10.4028/www.scientific.net/MSF.483-485.961

Citation:

P. A. Losee et al., "Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films", Materials Science Forum, Vols. 483-485, pp. 961-964, 2005

Online since:

May 2005

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$35.00

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