Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV
Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
D. Peters et al., "Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV", Materials Science Forum, Vols. 483-485, pp. 977-980, 2005