Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Dethard Peters; Rudolf Elpelt; Reinhold Schörner; Karl Otto Dohnke; Peter Friedrichs; Dietrich Stephani

doi:10.4028/www.scientific.net/MSF.483-485.977

Paper Titles

Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
p.961

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV
p.977

Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation
p.985

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Large Area, Avalanche-Stable 4H-SiC PiN Diodes...

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV

Abstract:

Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.