Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Abstract:

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Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

977-980

DOI:

10.4028/www.scientific.net/MSF.483-485.977

Citation:

D. Peters et al., "Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV", Materials Science Forum, Vols. 483-485, pp. 977-980, 2005

Online since:

May 2005

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Price:

$35.00

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