Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Shuichi Ono; Manabu Arai; C. Kimura

doi:10.4028/www.scientific.net/MSF.483-485.981

Paper Titles

Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V_BR > 4.5 kV
p.977

Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981

Lifetime Control of the Minority Carrier in PiN Diodes by He⁺ Ion Implantation
p.985

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997

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Demonstration of High-Power X-Band Oscillation in p⁺/n^-/n⁺ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Abstract:

We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.