Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Abstract:

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Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

1021-1024

DOI:

10.4028/www.scientific.net/MSF.483-485.1021

Citation:

F. Moscatelli et al., "Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors", Materials Science Forum, Vols. 483-485, pp. 1021-1024, 2005

Online since:

May 2005

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Price:

$35.00

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