Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors

Francesco Moscatelli; Andrea Scorzoni; Antonella Poggi; Mara Bruzzi; Stefano Lagomarsino; Stefano Mersi; Silvio Sciortino; Mihai Lazar; Annalisa Di Placido; Roberta Nipoti

doi:10.4028/www.scientific.net/MSF.483-485.1021

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Influence of Irradiation on Excess Currents in SiC pn Structures
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Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors
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Measurements of Charge Collection Efficiency of p⁺/n Junction SiC Detectors
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Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
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High Energy Resolution Detectors Based on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Measurements of Charge Collection Efficiency of...

Measurements of Charge Collection Efficiency of p⁺/n Junction SiC Detectors

Abstract:

Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm -3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

1021-1024

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.1021

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Online since:

May 2005

Authors:

Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Bruzzi, Stefano Lagomarsino, Stefano Mersi, Silvio Sciortino, Mihai Lazar, Annalisa Di Placido, Roberta Nipoti

Keywords:

Detectors, p+/n Junctions, Silicon Carbide (SiC), Simulation

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