Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering

Thaiyalnayaki, V.; Cerqueira, M.Fátima; Macedo, Francisco; Ferreira, João Alves

doi:10.4028/www.scientific.net/MSF.514-516.23

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The Study of High Temperature Annealing of a-SiC:H Films
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Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering
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Home Materials Science Forum Advanced Materials Forum IIIMicrostructure and Thermal Features of a-Si:H and...

Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering

Abstract:

Amorphous and nanocrystalline silicon thin films have been produced by reactive r.f. sputtering and their microstructure, optical and thermal properties were evaluated. A good correlation was found between the microstructure determined by Raman spectroscopy and X- ray diffraction and the thermal transport parameters.

Info:

Periodical:

Materials Science Forum (Volumes 514-516)

Main Theme:

Advanced Materials Forum III

Edited by:

Paula Maria Vilarinho

Pages:

23-27

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.23

Citation:

V. Thaiyalnayaki et al., "Microstructure and Thermal Features of a-Si:H and nc-Si:H Thin Films Produced by Rf Sputtering", Materials Science Forum, Vols. 514-516, pp. 23-27, 2006

Online since:

May 2006

Authors:

V. Thaiyalnayaki, M.Fátima Cerqueira, Francisco Macedo, João Alves Ferreira

Keywords:

Nanocrystalline Silicon, Structure, Thermal Property

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References

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Paper TitlePages

Studies of Amorphous Ni-P Thin Films Produced by the Chemical Reduction Method

Authors: K. Konopka, M. Trzaska, Dariusz Oleszak, W. Zieliński, Krzysztof Jan Kurzydlowski

249

Thickness Dependence of the Crystallization of α-Fe₂O₃/α-Al₂O₃(0001) Thin Films Grown by Sputtering

Authors: Tae Sik Cho, Min Su Yi, Do Young Noh, Seok Joo Doh, Jung Ho Je

Abstract: The crystallization of α-Fe2O3/α-Al2O3(0001) thin films has been studied using real-time synchrotron x-ray scattering and atomic force microscope. In the sputter-grown amorphous films of various thicknesses at room temperature, we find the coexistence of α-Fe2O3 and Fe3O4 interfacial crystallites (~50-Å-thick), well aligned to the α-Al2O3[0001] direction. The amorphous precursor is crystallized to the epitaxial α-Fe2O3 grains in three steps with annealing temperature; i) the growth of the well aligned α-Fe2O3 interfacial crystallites to approximately 200-Å-thick, together with the transformation of the Fe3O4 crystallites to the α-Fe2O3 crystallites (< 400°C), ii) the growth of the less aligned α-Fe2O3 grains on top of the well aligned grains (> 400°C), and iii) the nucleation of the different less aligned α-Fe2O3 grains directly on the α-Al2O3 substrate (> 600°C). The surface evolution of the amorphous precursor films after annealing is consistent with the microstructure evolution during the crystallization.

1213

Structural Changes in New Rapidly-Quenched Finemet Type and Hitperm Type Alloys

Authors: Mariusz Staszewski, M. Woch, Aleksandra Kolano-Burian, J. Barszcz, M. Buczek

Abstract: Structural transformations taking place during annealing of rapidly-quenched soft magnetic ribbons from the Finemet type and Hitperm type alloys were investigated. The X-ray quantitative phase analysis and X-ray diffusion scattering methods were used. It was found that the structural changes in the alloys studied, including crystallisation process and short-range ordering in the amorphous phase, are reflected by the changes in their magnetic properties. These properties, and particularly the magnitude of saturation induction Bs , depend on the content of cobalt and silicon in these alloys and on short-range order in the amorphous phase.

273

Microstructural Property of Silicon Thin Films Deposited on Nanodiamonds Related to QALD Growth Condition

Authors: Jing Lu, Yan Hui Wang

Abstract: Quasi atomic layer deposition method has been successfully used to coat detonation nanodiamonds with ultrathin silicon film from decomposition of gaseous monosilane. Transmission electron microscopy observation indicates a continuous silicon coating could be obtained on every individual particle of nanodiamonds. The changes in the microstructural property of silicon thin films deposited at the temperatures of 400, 450, 500, 550, and 600 °C have been characterized by Raman spectroscopy, X-ray diffraction and Energy dispersive spectroscopy techniques. The results show the phase transition of as-deposited silicon from a crystalline to an amorphous then to a crystalline phase with the temperature increase.

226

Raman and Electrical Analysis of Iodine-Doped Amorphous Carbon Thin Films

Authors: A.N. Fadzilah, K. Dayana, Mohamad Rusop Mahmood

Abstract: Iodine doped amorphous carbon (a-C: I) thin films were prepared by using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 5000C to 7000C. The physical and electrical properties of deposited a-C:I thin films were characterized by Raman spectroscope and Solar Simulator system. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). As deposition temperature increase, the ID/IG ratio shows difference value, which indicates the effects of the temperature towards the a-C: I structures. An ohmic graph was obtained for the IV measurement, and the conductivity varies from 10-4 to 101 Scm-1. The photoresponse was also determined for all samples. As a reference, an undoped a-C thin film was prepared to differentiate the characteristic between a-C and a-C: I.

281