Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process

Abstract:

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High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR up to 13) deep (>100 *m) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1115-1118

DOI:

10.4028/www.scientific.net/MSF.527-529.1115

Citation:

L. J. Evans and G. M. Beheim, "Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process", Materials Science Forum, Vols. 527-529, pp. 1115-1118, 2006

Online since:

October 2006

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$35.00

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