Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process

Laura J. Evans; Glenn M. Beheim

doi:10.4028/www.scientific.net/MSF.527-529.1115

Paper Titles

Augmented CMP Techniques for Silicon Carbide
p.1099

Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications
p.1103

Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons
p.1107

Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
p.1111

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process
p.1115

Via Hole Formation in Silicon Carbide by Laser Micromachining
p.1119

Development of a Microstrip SiC MMIC Process
p.1123

Energy Efficiency: The Commercial Pull for SiC Devices
p.1129

SiC Device Applications: Identifying and Developing Commercial Applications
p.1135

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Deep Reactive Ion Etching (DRIE) of High Aspect...

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process

Abstract:

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR ≤1) deep (>100 *m) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR up to 13) deep (>100 *m) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.