Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

Abstract:

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We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure, which can prevent the concentration of electric field at the edge of the gate metal [1]. Previously, we reported on the 4H-SiC RESURF JFET with a gate length (LG) of 10 μm [2]. Its specific on-resistance was 50 mΩcm2, which was still high. Therefore, a Ti/W layer was used as an ion implantation mask so as to decrease the thickness of the mask and to improve an accuracy of the device process. A RESURF JFET with the gate length (LG) of 3.0 μm was fabricated, and the specific on-resistance of 6.3 mΩcm2 was obtained. In this paper, the fabrication process and the electrical characteristics of the device are described.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1203-1206

Citation:

T. Masuda et al., "Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask", Materials Science Forum, Vols. 527-529, pp. 1203-1206, 2006

Online since:

October 2006

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$38.00

[1] T. Fujihira: Jpn. J. Appl. Phys. Vol. 36 (1997), pp.6254-6262.

[2] K. Fujikawa, et al: Materials Science Forum Vols. 457-460, pp.1189-1192.

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