SiC MESFET with a Double Gate Recess

Abstract:

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In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical device characteristics of the MESFETs are drain currents of 380mA/mm, breakdown voltages of 80V and ft/fmax of 10/25 GHz respectively. These transistors exhibit power densities of 3W/mm@3GHz in class AB operation and drain efficiencies of 60%. Packaged devices with 3 mm gate periphery of this type, with via-hole grounding, gave power densities of 1.2 W/mm@6GHz at 50 V drain bias.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1227-1230

DOI:

10.4028/www.scientific.net/MSF.527-529.1227

Citation:

P. Å. Nilsson et al., "SiC MESFET with a Double Gate Recess", Materials Science Forum, Vols. 527-529, pp. 1227-1230, 2006

Online since:

October 2006

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Price:

$35.00

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