RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate

Makoto Ogata; S. Katakami; Shuichi Ono; Manabu Arai

doi:10.4028/www.scientific.net/MSF.527-529.1235

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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529RF Characteristics of a Fully Ion-Implanted MESFET...

RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate

Abstract:

We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate by using ion implantation for the channel layer and contact region. Nitrogen ions were implanted to obtain a 0.25-μm-thick box-shaped profile with a doping density of 3.0×1017/cm3 for the channel region and to obtain a 0.2-μm-thick box-shaped profile with a doping density of 2.0×1020/cm3 for the contact region. Activation annealing is done in argon ambient at 1300 °C for 30 minutes. A 0.5- μm gate MESFET with 100-μm gate width showed a cut-off frequency of 7.5 GHz and a maximum oscillation frequency of 22.2 GHz. And its saturated output power was 25 dBm (3.16 W/mm), power gain was 6.7 dB and PAE was 15.7%.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1235-1238

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1235

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Online since:

October 2006

Authors:

Makoto Ogata, S. Katakami, Shuichi Ono, Manabu Arai

Keywords:

f_max, f_t, Ion Implantation, Leakage Current, MESFET, Semi-Insulating Substrate

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