RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate

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We fabricated a 0.5-μm gate MESFET on a bulk semi-insulating 4H-SiC substrate by using ion implantation for the channel layer and contact region. Nitrogen ions were implanted to obtain a 0.25-μm-thick box-shaped profile with a doping density of 3.0×1017/cm3 for the channel region and to obtain a 0.2-μm-thick box-shaped profile with a doping density of 2.0×1020/cm3 for the contact region. Activation annealing is done in argon ambient at 1300 °C for 30 minutes. A 0.5- μm gate MESFET with 100-μm gate width showed a cut-off frequency of 7.5 GHz and a maximum oscillation frequency of 22.2 GHz. And its saturated output power was 25 dBm (3.16 W/mm), power gain was 6.7 dB and PAE was 15.7%.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1235-1238

Citation:

M. Ogata et al., "RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate", Materials Science Forum, Vols. 527-529, pp. 1235-1238, 2006

Online since:

October 2006

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$38.00

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