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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529The Role of Residual Source/Drain Implant Damage...

The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1247-1250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1247

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Online since:

October 2006

Authors:

John Adjaye, Michael S. Mazzola, A.V. Los

Keywords:

Device Simulation, Implant Damage Traps, Lateral Straggle, p-Buffer Layer, Semi-Insulating Substrate Traps, Source/Drain Implant

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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