Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface

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Employing density functional theory we investigate the model interface between 1 × 1-6H-SiC{0001} surfaces and graphene layers. We find that the first graphene layer is covalently bonded to the SiC substrate, opposing the earlier assumption of a weak van-der-Waals bonding. The interface at the Si-face is metallic, while on the C-face it remains semiconducting. Further graphene layers are then only weakly bound and the typical graphitic properties of the electronic structure appear.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

693-696

Citation:

A. Mattausch and O. Pankratov, "Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface", Materials Science Forum, Vols. 556-557, pp. 693-696, 2007

Online since:

September 2007

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$38.00

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