9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

Qing Chun Jon Zhang; Charlotte  Jonas; Bradley Heath; Mrinal K. Das; Sei Hyung Ryu; Anant K. Agarwal; John W. Palmour

doi:10.4028/www.scientific.net/MSF.556-557.771

Paper Titles

High Throughput SiC Wafer Polishing with Good Surface Morphology
p.753

Polishing Characteristics of 4H-SiC Si-Face and C-Face by Plasma Chemical Vaporization Machining
p.757

4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
p.763

4H-SiC Power BJTs with High Current Gain and Low On-Resistance
p.767

9 kV 4H-SiC IGBTs with 88 mΩ·cm² of R _{diff, on}
p.771

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
p.775

Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
p.779

Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC
p.783

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al₂O₃ Gate Insulator
p.787

HomeMaterials Science ForumMaterials Science Forum Vols. 556-5579 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

9 kV 4H-SiC IGBTs with 88 mΩ·cm² of R _{diff, on}

Abstract:

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.