Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC
It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the present report, we investigated dependences of electrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics (channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiC p-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs are usually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOS interface state distribution around the valence band edge.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
M. Okamoto et al., "Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 783-786, 2007