Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC

Mitsuo Okamoto; Mieko Tanaka; Tsutomu Yatsuo; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.556-557.783

Paper Titles

4H-SiC Power BJTs with High Current Gain and Low On-Resistance
p.767

9 kV 4H-SiC IGBTs with 88 mΩ·cm² of R _{diff, on}
p.771

A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
p.775

Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
p.779

Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC
p.783

Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al₂O₃ Gate Insulator
p.787

Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
p.791

High Frequency 4H-SiC MOSFETs
p.795

High Temperature Characterisation of 4H-SiC VJFET
p.799

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Electrical Properties of p-Channel MOSFETs...

Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC

Abstract:

It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the present report, we investigated dependences of electrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics (channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiC p-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs are usually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOS interface state distribution around the valence band edge.

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Materials Science Forum (Volumes 556-557)

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783-786

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.783

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Online since:

September 2007

Authors:

Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda

Keywords:

Channel Mobility, CMOS, Interface States (or Traps), P-Channel MOSFET, Poly-Type, Power IC, p-Type MOS Capacitor

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