Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC

Abstract:

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It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the present report, we investigated dependences of electrical properties of the SiC p-channel MOSFETs on SiC poly-types. The on-state characteristics (channel mobility, threshold voltage, and temperature dependences) for the 4H- and 6H-SiC p-channel MOSFETs showed similar behavior, although those of 4H-SiC n-channel MOSFETs are usually quite different from those of 6H-SiC. These results might be caused by the similar SiC MOS interface state distribution around the valence band edge.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

783-786

DOI:

10.4028/www.scientific.net/MSF.556-557.783

Citation:

M. Okamoto et al., "Electrical Properties of p-Channel MOSFETs Fabricated on 4H- and 6H-SiC", Materials Science Forum, Vols. 556-557, pp. 783-786, 2007

Online since:

September 2007

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Price:

$35.00

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