This paper demonstrates the breakdown voltage characteristics of different edge termination structures including aluminum (Al)-deposited guard ring and Al-deposited guard ringassisted field limiting ring (FLR) for a 4H silicon carbide (SiC) Schottky barrier diode (SBD). In order to investigate the application feasibility of the Al-deposited junction termination to a high breakdown voltage SiC-SBD, two types of SiC-SBDs are fabricated using conventional photolithography, electron beam evaporation, and thermal treatment techniques without ion implantation and thermal oxidation procedures. The breakdown voltage characteristics of the SiCSBDs are significantly dependent on the Al-deposited edge termination. The SiC-SBD without the Al-deposited edge termination shows less than 250 V breakdown voltage, while the Al-deposited guard ring and Al-deposited guard ring-assisted FLR structures show roughly 700 V and 1200 V breakdown voltages, respectively. The prominent improvement in the breakdown voltage characteristics is attributed to the electric field lowering at the Schottky contact edge by the Al deposition edge termination.