Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Gheorghe Brezeanu; M. Brezeanu; F. Udrea; G. Amaratunga; C. Boianceanu; M. Badila; Konstantinos Zekentes; Adi Visoreanu

doi:10.4028/www.scientific.net/MSF.556-557.865

Paper Titles

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
p.847

Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure
p.851

600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
p.857

Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
p.861

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
p.865

FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
p.869

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
p.873

Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing
p.877

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
p.881

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Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Abstract:

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.