Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Abstract:

Article Preview

A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

865-868

DOI:

10.4028/www.scientific.net/MSF.556-557.865

Citation:

G. Brezeanu et al., "Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond", Materials Science Forum, Vols. 556-557, pp. 865-868, 2007

Online since:

September 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.