Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
A classical implementation of the field plate technique is the oxide ramp termination. This paper presents for the first time a comparison between SiC and diamond Schottky barrier diodes (SBD) using this termination. The influences of the ramp angle and oxide thickness on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures. The efficiency of the termination is also evaluated.
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
G. Brezeanu et al., "Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond", Materials Science Forum, Vols. 556-557, pp. 865-868, 2007