Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Chiharu Ota; Johji Nishio; Tetsuo Hatakeyama; Takashi Shinohe; Kazutoshi Kojima; Shin Ichi Nishizawa; Hiromichi Ohashi

doi:10.4028/www.scientific.net/MSF.556-557.881

Paper Titles

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
p.865

FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
p.869

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
p.873

Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing
p.877

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
p.881

The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes
p.885

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
p.889

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
p.895

1.2 kV Pin Diodes with SiCrystal Epiwafer
p.901

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Simulation, Fabrication and Characterization of...

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Abstract:

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.