Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Abstract:

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The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

881-884

DOI:

10.4028/www.scientific.net/MSF.556-557.881

Citation:

C. Ota et al., "Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)", Materials Science Forum, Vols. 556-557, pp. 881-884, 2007

Online since:

September 2007

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Price:

$35.00

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