The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

Shin Harada; Yasuo Namikawa

doi:10.4028/www.scientific.net/MSF.556-557.885

Paper Titles

FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
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High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
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Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing
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Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
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The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes
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Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects
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Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
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1.2 kV Pin Diodes with SiCrystal Epiwafer
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Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation
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The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

Abstract:

The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a straight etch line with a pair of tilted oval pits and additional etch pits forming an isosceles triangle, was observed on some devices. All of the devices containing this SF structure showed large reverse leakage currents in spite of the good forward I-V characteristics. We speculate that this in-grown SF includes another planar fault on the {1-100} plane besides the basal plane which has a great influence on reverse currents of SBDs.