The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes

Abstract:

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The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a straight etch line with a pair of tilted oval pits and additional etch pits forming an isosceles triangle, was observed on some devices. All of the devices containing this SF structure showed large reverse leakage currents in spite of the good forward I-V characteristics. We speculate that this in-grown SF includes another planar fault on the {1-100} plane besides the basal plane which has a great influence on reverse currents of SBDs.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

885-888

DOI:

10.4028/www.scientific.net/MSF.556-557.885

Citation:

S. Harada and Y. Namikawa, "The Influence of In-Grown Stacking Faults on the Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes", Materials Science Forum, Vols. 556-557, pp. 885-888, 2007

Online since:

September 2007

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$35.00

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