600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

Tsuyoshi Yamamoto; Takeshi Endo; Nobuyuki Kato; Hiroki Nakamura; Toshio Sakakibara

doi:10.4028/www.scientific.net/MSF.556-557.857

Paper Titles

Simulation Study of High-k Materials for SiC Trench MOSFETs
p.839

Temperature Stability of Heteropolytypic 6H/3C FETs
p.843

Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
p.847

Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure
p.851

600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
p.857

Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
p.861

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
p.865

FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD
p.869

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
p.873

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557600 V 100 A 4H-SiC Junction Barrier Schottky Diode...

600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

Abstract:

4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125°C..