600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

Abstract:

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4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125°C..

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

857-860

DOI:

10.4028/www.scientific.net/MSF.556-557.857

Citation:

T. Yamamoto et al., "600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination", Materials Science Forum, Vols. 556-557, pp. 857-860, 2007

Online since:

September 2007

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Price:

$35.00

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