600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125°C..
N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall
T. Yamamoto et al., "600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination", Materials Science Forum, Vols. 556-557, pp. 857-860, 2007