Recrystallization texture in grain oriented silicon steel at different annealing temperature is investigated. Normalized x-ray intensities of various orientation components observed in Orientation Distribution Function are used for comparison. The computed CSL boundary distributions about Goss component with annealing condition were calculated. The misorientation angle distribution is also measured in order to find the importance of high-energy boundary with misorientation 20~45° range for the secondary recrystallization of Goss grain. From the analysis of CSL boundary distribution and misorienation angle distribution, the distribution of CSL boundaries does not evidently show any preferred difference between Goss and other texture components. Whereas, the misorientation angle analysis shows that the number of 20°~45° misoriented boundaries is higher around the Goss grains than around other texture components.