New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

Elvira Fortunato; Pedro Barquinha; Gonçalo Gonçalves; Luís Pereira; Rodrigo Martins

doi:10.4028/www.scientific.net/MSF.587-588.348

Paper Titles

New Experimental Facts Concerning the Thermally Stimulated Discharge Current in Dielectric Materials
p.328

Spin Disorder Resistivity and Electronic Specific Heat of Gd₄(Co_1-xCu_x)₃ Compounds
p.333

Phase Separation of La_0.70-xEr_xSr_0.30MnO₃ and its Effect on Magnetic and Magnetocaloric Properties
p.338

Reactive DC Magnetron Sputtering of Vanadium Oxide Thin Films
p.343

New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)
p.348

Corrosion Resistances of As-Cast and Quenched Samples of a Zn-22Al Eutectoid Alloy
p.355

Tribological Behaviour of an A355 Steel Pipe Welding
p.360

Microstructure Interpretation of Copper and Bronze Archaeological Artefacts from Portugal
p.365

A-TIG Welding of a Stainless Steel
p.370

HomeMaterials Science ForumMaterials Science Forum Vols. 587-588New Amorphous Oxide Semiconductor for Thin Film...

New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)

Abstract:

Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7×107. The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.