Preface
Visible Light-Emitting Diodes - The Formative Years
p.1
p.1
Perspective on the Development of III-Nitrides for Optical Emitters
p.17
p.17
Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
p.29
p.29
Dislocation Networks Formed by Silicon Wafer Direct Bonding
p.57
p.57
Si- and SiGe-Based LEDs
p.79
p.79
SOI-LEDs with Carrier Confinement
p.101
p.101
MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
p.117
p.117
Present Status of Deep UV Nitride Light Emitters
p.141
p.141
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 590)
Online since:
August 2008
Сopyright:
© 2008 Trans Tech Publications Ltd. All Rights Reserved
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