Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters

Abstract:

Article Preview

There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chip opto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 m, caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here we present a brief review of today knowledge about electronic properties of dislocations in silicon and dislocation-related luminescence in connection with possible application of this luminescence for silicon infrared light-emitting diodes (Si-LEDs).

Info:

Periodical:

Edited by:

Bo Monemar, Martin Kittler, Hermann Grimmeiss

Pages:

29-56

DOI:

10.4028/www.scientific.net/MSF.590.29

Citation:

V. V. Kveder and M. Kittler, "Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters", Materials Science Forum, Vol. 590, pp. 29-56, 2008

Online since:

August 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.