Dislocation Networks Formed by Silicon Wafer Direct Bonding

Abstract:

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The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible

Info:

Periodical:

Edited by:

Bo Monemar, Martin Kittler, Hermann Grimmeiss

Pages:

57-78

DOI:

10.4028/www.scientific.net/MSF.590.57

Citation:

M. Reiche "Dislocation Networks Formed by Silicon Wafer Direct Bonding", Materials Science Forum, Vol. 590, pp. 57-78, 2008

Online since:

August 2008

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$35.00

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