Dislocation Networks Formed by Silicon Wafer Direct Bonding

Manfred Reiche

doi:10.4028/www.scientific.net/MSF.590.57

Paper Titles

Preface

Visible Light-Emitting Diodes - The Formative Years
p.1

Perspective on the Development of III-Nitrides for Optical Emitters
p.17

Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
p.29

Dislocation Networks Formed by Silicon Wafer Direct Bonding
p.57

Si- and SiGe-Based LEDs
p.79

SOI-LEDs with Carrier Confinement
p.101

MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
p.117

Present Status of Deep UV Nitride Light Emitters
p.141

HomeMaterials Science ForumMaterials Science Forum Vol. 590Dislocation Networks Formed by Silicon Wafer...

Dislocation Networks Formed by Silicon Wafer Direct Bonding

Abstract:

The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible