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Nonpolar and Semipolar Orientations: Material Growth and Properties

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Abstract:

Nitride-based optoelectronic devices prepared in the c orientation have been successfully introduced to the global marketplace and are changing the way we think about lighting. A part of the research interest has shifted toward nonpolar and semipolar orientations, which has the potential to broaden the scope and impact of this technology. This is because quantum-well structures prepared in nonpolar and semipolar orientations are able to suppress the quantum-confinement Stark effect, which has a negative impact on optoelectronic device performance. The lower crystal symmetry of such orientations provides spontaneously polarized light emission. Despite these attractive properties of nonpolar and semipolar orientations, the corresponding materials growth is not trivial. The present chapter discusses our efforts on growth of III-nitride materials in nonpolar and semipolar orientations and the related material properties.

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Periodical:

Materials Science Forum (Volume 590)

Pages:

211-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.590.211

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Online since:

August 2008

Authors:

Hisashi Masui, Shuji Nakamura

Keywords:

Lateral Epitaxial Overgrowth, Nonpolar Orientation, Semipolar Orientation, Stacking Fault, Threading Dislocation, Wurtzite Gallium Nitride

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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