AlN and AlGaN by MOVPE for UV Light Emitting Devices

Abstract:

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The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

Info:

Periodical:

Edited by:

Bo Monemar, Martin Kittler, Hermann Grimmeiss

Pages:

175-210

DOI:

10.4028/www.scientific.net/MSF.590.175

Citation:

H. Amano et al., "AlN and AlGaN by MOVPE for UV Light Emitting Devices", Materials Science Forum, Vol. 590, pp. 175-210, 2008

Online since:

August 2008

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Price:

$35.00

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