Paper Titles

Dislocation Networks Formed by Silicon Wafer Direct Bonding
p.57

Si- and SiGe-Based LEDs
p.79

SOI-LEDs with Carrier Confinement
p.101

MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
p.117

Present Status of Deep UV Nitride Light Emitters
p.141

AlN and AlGaN by MOVPE for UV Light Emitting Devices
p.175

Nonpolar and Semipolar Orientations: Material Growth and Properties
p.211

Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
p.233

Assessment and Modification of Recombination Dynamics in In_xGa_1-xN-Based Quantum Wells
p.249

HomeMaterials Science ForumMaterials Science Forum Vol. 590AlN and AlGaN by MOVPE for UV Light Emitting...

AlN and AlGaN by MOVPE for UV Light Emitting Devices

Article Preview

Abstract:

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

You might also be interested in these eBooks

Advances in Light Emitting Materials

Info:

Periodical:

Materials Science Forum (Volume 590)

Pages:

175-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.590.175

Citation:

Cite this paper

Online since:

August 2008

Authors:

Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Keywords:

AlGaN, Aluminum Nitride (AlN), DUV LD, DUV LED, MOVPE, Patterned Template, UV LD, UV-LED

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2008 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. A. Inada, H. Amano, I. Akasaki, A. Morita and K. Kobayashi, Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu Vol. 5 (2006), p.73 (in Japanese).

[2] H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. Vol. 48 (1986), 353.

[3] Y. Taniyasu, M. Kasu, T. Makimoto, Nature Vol. 441 (2006), p.325.

[4] S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, Takahiro, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, T. Sota, Nature Materials Vol. 5 (2006).

DOI: 10.1038/nmat1726

[5] H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell and F. A. Ponce, Phys. Stat. Sol., (a) Vol. 201 (2004), p.2679.

DOI: 10.1002/pssa.200405044

[6] M. Morita, N. Uesugi, S. Isogami, K. Tsubouchi and N. Mikoshiba, Jpn. J. Appl. Phys. Vol. 20 (1981) , p.17.

[7] L. M. Yeddanapalli and C. C. Schubert, J. Chem. Phys., Vol. 14 (1946), p.1.

[8] J. P. Zhang, V. Adivarahan, H. M. Wang, Q. Fareed, E. Kuokstis, A. Chitnis, M. Shatalov, J. W. Yang, G. Simin, M. A. Khan, M. Shur and R. Gaska, Jpn. J. Appl. Phys. Vol. 40 (2001), p. L921.

DOI: 10.1143/jjap.40.l921

[9] Y. Ishihara, J. Yamamoto, M. Kurimoto, T. Takano, T. Honda and H. Kawanishi, Jpn. J. Appl. Phys. Vol. 38(1999), p. L1296.

[10] H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata, Appl. Phys. Lett. Vol. 91 (2007), p.071901.

[11] M. Ahonen, M. Pessa and T. Suntola, Thin Solid Films Vol. 65 (1980), p.301.

[12] N. Kobayashi, T. Makimoto and Y. Horikoshi, Jpn. J. Appl. Phys. Vol. 24 (1985), p. L962.

[13] A. Khan, K. Balakrishnan and T. Katona, Nature Photonics Vol. 2 (2008), p.77.

[14] Y. Ohba and A. Hatano, Jpn. J. Appl. Phys. Vol. 35 (1996), p. L1013.

[15] M. Imura, K. Nakamo, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh, Jpn. J. Appl. Phys. Vol. 45 (2006), p.8639.

DOI: 10.1143/jjap.45.8639

[16] O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Meihr, A. Bergmaier and G. Dollinger, J. Vac. Sci. & Technol. Vol. B14 (1996), p.3532.

[17] Y. Ohba and A. Hatano, Jpn. J. Appl. Phys. Vol. 35 (1996), p. L1013.

[18] M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh, Jpn. J. Appl. Phys. Vol. 46 (2007), p.1458.

DOI: 10.1143/jjap.46.1458

[19] A. Koukitu, N. Takahashi and H. Seki, Jpn. J. Appl. Phys. Vol. 36 (1997), p. L1136.

[20] N. Okada, N. Fujimoto, T. Kitano, G. Narita, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi and A. Bandoh, Jpn. J. Appl. Phys. Vol. 45(2006), p.2502.

DOI: 10.1143/jjap.45.2502

[21] S. Kamiyama, M. Iwaya, S. Takanami, S. Terao, A. Miyazaki, H. Amano and I. Akasaki, Phys. Stat. Sol. (a) Vol. 192 (2002), p.296.

DOI: 10.1002/1521-396x(200208)192:2<296::aid-pssa296>3.0.co;2-z

[22] K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh, J. Crystal Growth Vol. 298 (2007), p.265.

DOI: 10.1016/j.jcrysgro.2006.10.026

[23] M. Suzuki and T. Uenoyama, EMIS Datareview Series, Properties, Processing and Applications of Gallium Nitride and Related Semiconductors Vol. 23 (1999), 175.

[24] Y. Koide, N. Itoh, K. Itoh, N. Sawaki and I. Akasaki, Jpn. J. Appl. Phys. Vol. 27 (1988), p.11.

[25] K. Itoh, T. Kawamoto, H. Amano, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. Vol. 30 (1991), p. (1924).

[26] S. Terao, M. Iwaya, T. Sano, T. Nakamura, S. Kamiyama, H. Amano and I. Akasaki, J. Crystal Growth Vol. 237-239 (2002), p.947.

DOI: 10.1016/s0022-0248(01)02009-7

[27] J. A. Floro and E. Chason, Appl. Phys. Lett. 69 (1996), p.3830.

[28] M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano and I. Akasaki, Jpn. J. Appl. Phys. Vol. 37 (1998), p. L316.

[29] H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. Floro, E. Chason and J. Figiel, Jpn. J. Appl. Phys. Vol. 37 (1998), p. L1540.

DOI: 10.1143/jjap.37.l1540

[30] A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano and I. Akasaki, Phys. Stat. Sol. (a), Vol. 188 (2001), p.293.

DOI: 10.1002/1521-396x(200111)188:1<293::aid-pssa293>3.0.co;2-d

[31] A. Dadgar, J. Blasing, A. Diez, A. Alam, M. Heuken and A. Krost, Jpn. J. Appl. Phys. Vol. 39 (2000), p. L1183.

DOI: 10.1143/jjap.39.l1183

[32] K. E. Waldrip, J. Han, J. J. Fiegel, H. Zhou, E. Makarona and A. V. Nurmikko, Appl. Phys. Lett. Vol. 78 (2001), p.3205.

[33] N. Kuwano, T. Tsuruda, Y. Adachi, S. Terao, S. Kamiyama, H. Amano and I. Akasaki, Phys. Stat. Sol. (a) Vol. 192 (2002), p.366.

DOI: 10.1002/1521-396x(200208)192:2<366::aid-pssa366>3.0.co;2-6

[34] A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi, Jpn. J. Appl. Phys. Vol. 36 (1997), p. L899.

[35] T Zheleva, O. Nam, M. Bremser and R. Davis, Appl. Phys. Lett. Vol. 71 (1997), p.2472.

[36] M. Iwaya, S. Terao, T. Sano, T. Ukai, R. Nakamura, S. Kamiyama, H. Amano and I. Akasaki, J. Crystal Growth Vol. 237-239 (2002), p.951.

DOI: 10.1016/s0022-0248(01)02011-5

[37] D. Hull and D. J. Bacon Introduction to Dislocations, Butterworth Heineman, 4th Edition, 2001, p.168.

[38] Z. Liliental-Weber, S. Ruvimov, C. Kisielowski, Y. Chen, W. Swider, J. Washburn, N. Newman, A. Gassmann, X. Liu and L. Schloss, Mater. Res. Soc. Symp. Proc., Gallium Nitride and Related Materials Vol. 395 (1996), p.351.

DOI: 10.1557/proc-395-351

[39] A. Sakai, H. Sunakawa and A. Usui, Appl. Phys. Lett. Vol. 71 (1997), p.2259.

[40] K. Iida, T. Kawashima, A. Miyazaki, H. Kasugai, S. Mishima, A. Honshio, Y. Miyake, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki, Jpn. J. Appl. Phys. Vol. 43 (2004), p. L479.

DOI: 10.1143/jjap.43.l499

[41] S. Nakamura, M. Senoh, S. -I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. Vol. 35 (1996), p. L74.

DOI: 10.1143/jjap.35.l74

[42] M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, N. M. Johnson, Proc., SPIE the Intern. Soc. Opt. Eng. Vol. 4995 (2003), p.103.

[43] J. Edmond, A. Abare, M. Bergman, J. Bharathan, K. Lee, B. D. Emerson, K. Haberern, J. Ibbetson, M. Leung, P. Russel and D. Slater, J Crystal Growth Vol. 272 (2004), p.270.

DOI: 10.1016/j.jcrysgro.2004.08.056

[44] A. Usui, Mater. Res. Soc. Symp. Proc. Vol. 482 (1998), p.233.

[45] K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika and T. Maeda, J. Crystal Growth Vol. 221 (2000), p.316.

DOI: 10.1016/s0022-0248(00)00707-7

[46] S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki, Optoelec. Rev. 10 (2002), p.225.

[47] R. Liu, A. Bell, F. A. ponce, H. Amano, I. Akasaki and D. Cherns, Phys. Stat. Sol. (c) Vol. 0 (2003), p.2136.

[48] M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, T. Noro, T. Takagi and A. Bandoh, Jpn. J. Appl. Phys. Vol. 46 (2007), p.1458.

DOI: 10.1143/jjap.46.1458

[49] H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. Vol. 48 (1986), p.353.

[50] K. Itoh, Doctor Thesis, Faculty Electric Engineering, Nagoya University, Nagoya, (1991).

[51] T. Shibata, K. Asai, S. Sumiya, M. Mouri, M. Tanaka, O. Oda, H. Katsukawa, H. Miyake and K. Hiramatsu, Phys. Stat. Sol. (c) Vol. 0 (2003), p. (2023).

DOI: 10.1002/pssc.200303392

[52] Y. Kida, T. Shibata H. Miyake and K. Hiramatsu, Jpn. J. Appl. Phys. Vol. 42 (2003), L572.

[53] Q. Paduano and and D. Weyburne, Jpn. J. Appl. Phys. Vol. 44 (2005) , L150.

[54] S. Paduano, D. W. Weyburne, J. Jasinski and Z. Liliental-Weber, J. Cryst. Growth Vol. 261 (2004) p.259.

[55] Y. Ohba, R. Sato and K. Kaneko, Jpn. J. Appl. Phys. 40, (2001) L1293. Y. Ohba, R. Sato and K. Kaneko, Jpn. J. Appl. Phys. Vol. 36 (1997), p. L1565.

DOI: 10.1143/jjap.36.l1565

[56] M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh, J. Crytsal Growth, in press.

[57] M. Imura, K. nakano, T. Kitano, N. Fujimoto, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, A. Bandoh, Appl. Phys. Lett. 89(2006), p.221901.

DOI: 10.1063/1.2364460

[58] N. Okada, N. Fujimoto, T. Kitano, G. Narita, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki, Jpn. J. Appl. Phys. Vol. 45 (2006), p.2502.

DOI: 10.1143/jjap.45.2502

[59] T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, H. P. Strunk, Philos. Mag. A Vol. 77 (1998), p.1013.

DOI: 10.1080/01418619808221225

[60] M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh, J. Crystal Growth Vol. 298 (2007), p.257.

DOI: 10.1016/j.jcrysgro.2006.10.043

[61] A. Sakai, H. Sunakawa, A. Usui, Appl. Phys. Lett. Vol. 71 (1997), p.2259.

[62] Z. Liliental-Weber, D. Cherns, J. Appl. Phys. Vol. 89 (2001), p.7833.

[63] A. Usui, H. Sunakawa, A. Sakai, A. Yamaguchi, Jpn. J. Appl. Phys. Vol. 36 (1997), p. L899.

[64] K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki Jpn. J. Appl. Phys. Vol. 46 (2007), p. L307.

DOI: 10.1143/jjap.46.l307

[65] Y. Taniyasu, M. Kasu and N. Kobayashi, Appl. Phys. Lett., Vol. 81 (2002), 1255.

[66] J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, Appl. Phys. Lett. Vol. 80 (2002) , 1210.

[67] N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin and H. X. Jiang. Appl. Phys. Lett. Vol. 85 (2004), p.2271.

[68] M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin and H. X. Jiang. Proc. of SPIE 5530 (2004) , p.7.

[69] H. Yu, E. Ulker and E. Ozbay, J. Cryst. Growth Vol. 283 (2006), p.419.

[70] Y. Taniyasu, M. Kasu and T. Makimoto, Nature Vol. 441 (2006), p.18.

[71] J. A. Van Vechten, J. D Zook, R. D. Horning and B. Goldenberg, Jpn. J. Appl. Phys. Vol. 31 (1992), p.3662.

[72] S. Nakamura, T. Mukai, M. Senoh and N. Iwasa, Jpn. J. Appl. Phys. Vol. 31 (1992), p. L139.

[73] Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, I. Grzegory, S. Porowski, D. J. H. Lambert, C. J. Eiting and R. D. Dupuis, Appl. Phys. Lett. Vol. 75(1999), p.4159.

DOI: 10.1063/1.125568

[74] M. Suzuki, T. Uenoyama and A. Yanase, Phys. Rev. Vol. B52 (1995), p.8132.

[75] K. Hayashi, K. Itoh, N. Sawaki, I. Akasaki, Solid State Commun. Vol. 77 (1991), p.115.

[76] J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (IEE, London, 1999) 143.

[77] M. Katsuragawa, S. Sota, M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano and I. Akasaki, J. Cryst. Growth Vol. 189 (1998), p.528.

DOI: 10.1016/s0022-0248(98)00345-5

[78] Y. Taniyasu, M. Kasu and N. Kobayashi, Appl. Phys. Lett. Vol. 89 (2006), p.182112.

[79] M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Altahtamouni, J. Y. Lin and H. X. Jiang. Appl. Phys. Lett. Vol. 89 (2006), p.152120.

DOI: 10.1063/1.2362582

[80] J. R. Haynes, Phys. Rev. Lett. Vol. 4 (1960), p.361.

[81] J. W. Orton and C. T. Foxon, A8. 5 Acceptors in GaN adn related compounds, Properties, processing and applications of Gallium nitride and related semiconductors, Edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel, An INSPEC publication, emis Datareviews Series No. 23, p.300.

[82] http: /www. semitech. us/products/SiLENSe.