AlN and AlGaN by MOVPE for UV Light Emitting Devices
The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
Bo Monemar, Martin Kittler, Hermann Grimmeiss
H. Amano et al., "AlN and AlGaN by MOVPE for UV Light Emitting Devices", Materials Science Forum, Vol. 590, pp. 175-210, 2008