The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques

Abstract:

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Slow positron beam and coincidence Doppler broadening techniques have been used to follow temperature-induced defects and structural changes in Cz-Si with an initial oxygen content of 1.1×1018 cm-3. Oxygen is recognized as a peak at about 11.85×10-3m0c on the ratio curves. For Cz-Si annealed at 480 oC/15h or 600 oC/15h, the ratio curves show the presence of vacancy-like defects, but they are not associated with oxygen. For Cz-Si annealed at 480 oC/15h, then followed by a 600 oC/15h heat treatment, the ratio curves show the signal of O atom. The ratio curves of Cz-Si, thermally treated by a two-step (480oC/15h + 600oC/15h) pre-annealing, followed by a one-step annealing under different hydrostatic argon pressures and annealed temperatures, also show a peak at 11.85×10-3m0c. The height of the peak varies with different samples. Experimental results indicate that the SiO2 film will form on the surface of Cz-Si after the heat treatment.

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Periodical:

Edited by:

S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean

Pages:

131-133

DOI:

10.4028/www.scientific.net/MSF.607.131

Citation:

W. Deng et al., "The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques", Materials Science Forum, Vol. 607, pp. 131-133, 2009

Online since:

November 2008

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$35.00

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