Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

Abstract:

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Positron annihilation lifetime (PAL) spectroscopy,photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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Periodical:

Edited by:

S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean

Pages:

134-136

DOI:

10.4028/www.scientific.net/MSF.607.134

Citation:

Y.J. Zhang et al., "Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy", Materials Science Forum, Vol. 607, pp. 134-136, 2009

Online since:

November 2008

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$35.00

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