Defect Study of As-Grown Single Crystal ZnO by Positron

Jun Yu Ke; Hui Li; Jin Biao Pang; Yi Qun Dai; Zhu Wang; You Wen Zhao

doi:10.4028/www.scientific.net/MSF.607.143

Paper Titles

The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques
p.131

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy
p.134

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy
p.137

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy
p.140

Defect Study of As-Grown Single Crystal ZnO by Positron
p.143

The Calculation of Positron Lifetime in Ni₃Al Alloy
p.146

Defects in Carbon Allotropes Studied by Positron Annihilation
p.149

Positron Annihilation on the Surfaces of Single Crystals of Si, SiO₂, Graphite and Cu
p.152

Some Problems of the Free Volume Studies in Porous Polymers Using Positron Annihilation and Auxiliary Techniques
p.155

HomeMaterials Science ForumMaterials Science Forum Vol. 607Defect Study of As-Grown Single Crystal ZnO by...

Defect Study of As-Grown Single Crystal ZnO by Positron

Abstract:

ositron lifetime spectroscopy (PAS) and Coincidence Doppler broadening measurements have been performed in as-grown and annealing single crystal ZnO. The temperature dependence observed in annealed ZnO indicates that the defect is removed during annealing. By combining the Doppler broadening measurements, we infer that there isn′t hydrogen filling the zinc vacancy site in the as-grown ZnO due to the same characteristics in CDB for as-grown and annealed ZnO samples