Defects in Carbon Allotropes Studied by Positron Annihilation

Abstract:

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Slow positron beam technique has been employed to study the defects of graphite, nanophase C, as well as the structural changes in un-doped, B-doped and S-doped diamond films with annealing temperatures. The results show that the concentration of defects in nanophase C is higher than that in graphite. The vacancy concentration in the S-doped diamond film is higher than that in un-doped one. The addition of small amount of B atoms leads to the decrease of the vacancy concentration in the film. The vacancy concentration in un-doped diamond film would decrease after annealing at temperature below 600°C, while vacancy concentration will increase after annealing at temperatures above 900°C. The vacancy concentration in the 40 Ω cm B-doped diamond film decreases at annealing temperatures higher than 200°C.

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Periodical:

Edited by:

S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean

Pages:

149-151

DOI:

10.4028/www.scientific.net/MSF.607.149

Citation:

Y. Y. Huang et al., "Defects in Carbon Allotropes Studied by Positron Annihilation", Materials Science Forum, Vol. 607, pp. 149-151, 2009

Online since:

November 2008

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$35.00

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