Defects in Carbon Allotropes Studied by Positron Annihilation

Yu Yang Huang; Zhen Ying Chen; Ya Qin Wei; Yu Xia Li; Wen Deng

doi:10.4028/www.scientific.net/MSF.607.149

Paper Titles

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy
p.137

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy
p.140

Defect Study of As-Grown Single Crystal ZnO by Positron
p.143

The Calculation of Positron Lifetime in Ni₃Al Alloy
p.146

Defects in Carbon Allotropes Studied by Positron Annihilation
p.149

Positron Annihilation on the Surfaces of Single Crystals of Si, SiO₂, Graphite and Cu
p.152

Some Problems of the Free Volume Studies in Porous Polymers Using Positron Annihilation and Auxiliary Techniques
p.155

Spontaneous Emission of Positronium Negative Ions from Tungsten (100) Surface
p.161

Temperature and Pressure Measurements of PALS Spectra in Photonic Glasses
p.166

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Defects in Carbon Allotropes Studied by Positron Annihilation

Abstract:

Slow positron beam technique has been employed to study the defects of graphite, nanophase C, as well as the structural changes in un-doped, B-doped and S-doped diamond films with annealing temperatures. The results show that the concentration of defects in nanophase C is higher than that in graphite. The vacancy concentration in the S-doped diamond film is higher than that in un-doped one. The addition of small amount of B atoms leads to the decrease of the vacancy concentration in the film. The vacancy concentration in un-doped diamond film would decrease after annealing at temperature below 600°C, while vacancy concentration will increase after annealing at temperatures above 900°C. The vacancy concentration in the 40 Ω cm B-doped diamond film decreases at annealing temperatures higher than 200°C.