Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy

C.X. Peng; Hui Min Weng; K.F. Wang; F.L. Guo; B.J. Ye; X.Y. Zhou; Rong Dian Han

doi:10.4028/www.scientific.net/MSF.607.137

Paper Titles

Structure and Positron Characteristics of Basic Open Volume Defects in Zirconia
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Luminescence and Defect Study of Ce³⁺-Doped Lu₃Al₅O₁₂ Phosphors
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The Behavior of Oxygen and Defects in Si-Based Semiconductor Studied by Positron Annihilation Techniques
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Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy
p.134

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy
p.137

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy
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Defect Study of As-Grown Single Crystal ZnO by Positron
p.143

The Calculation of Positron Lifetime in Ni₃Al Alloy
p.146

Defects in Carbon Allotropes Studied by Positron Annihilation
p.149

HomeMaterials Science ForumMaterials Science Forum Vol. 607Characterizing Native Point Defects in ZnO Bulk by...

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy

Abstract:

Positron annihilation spectroscopy was employed to study the native point defects in ZnO single crystal, in combination with calculated results of positron lifetime and electron momentum distribution. The theoretical and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600oC annealing treatment. Oxygen vacancies have been characterized by coincidence Doppler broadening (CDB) spectroscopy, combined with calculated electron momentum distribution. CDB spectroscopies show that oxygen vacancies don't appear until 600oC annealing treatment, and increase due to ZnO decomposition with annealing temperature rising.