Nanocrystal Non-Volatile Memory Devices

Zs.J. Horváth; P. Basa

doi:10.4028/www.scientific.net/MSF.609.1

Paper Titles

Preface

Nanocrystal Non-Volatile Memory Devices
p.1

Sm_1-xNd_xNiO₃ Thin Films Deposition by KrF Laser Ablation
p.27

Problems with Synthesis of Chalcopyrite CuIn_1-xB_xSe₂
p.33

Phase Explosion in Silicon and Titanium Targets Irradiated by Third Harmonic Nd-YAG Pulsed Laser
p.37

Optical Properties of the Strained Layer Superlattices (GaAs)₆/(GaP)_m(001) (m=2, 4 and 6)
p.41

Characterization of a-C:H Thin Films Deposited from C₂H₄ by PECVD Microwave Discharge
p.49

Thin Layered Structures Analysis Using NUR Reflectometer
p.53

HomeMaterials Science ForumMaterials Science Forum Vol. 609Nanocrystal Non-Volatile Memory Devices

Nanocrystal Non-Volatile Memory Devices

Abstract:

The physical background and present status of the application of metal-insulator-silicon structures with semiconductor nanocrystals embedded in the insulator layer for memory purposes is breafly summarized.

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Periodical:

Materials Science Forum (Volume 609)

Pages:

1-9

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.609.1

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Online since:

January 2009

Authors:

Zs.J. Horváth, P. Basa

Keywords:

Chemical Vapor Deposition (CVD), Ion Implantation, MIS, MNOS, Nanocrystal, Non-Volatile Memory (NVM)

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