A FET Gas Sensor Device Based on Porous Silicon

N. Zouadi; N. Gabouze; D. Bradai; D. Dahmane

doi:10.4028/www.scientific.net/MSF.609.261

Paper Titles

Effect of Chromium and Vanadium on Nanolayered Ternary Carbides: AB Initio Study
p.239

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature
p.243

Functionalization of ISE Sensor for Metal Ion Detection
p.249

Adsorption of Dyes and Metal Ions by Acrylamide - Co - Acrylic Acid Hydrogels Synthesized by Gamma Radiation
p.255

A FET Gas Sensor Device Based on Porous Silicon
p.261

Characterization of CN_x Thin Films Synthesized by Laser Ablation Technique
p.265

Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application
p.269

On Topographic Properties of Semiconductor Surfaces and Thin Film Systems
p.275

Photoluminescence of Passivated a-Si:H
p.281

HomeMaterials Science ForumMaterials Science Forum Vol. 609A FET Gas Sensor Device Based on Porous Silicon

A FET Gas Sensor Device Based on Porous Silicon

Abstract:

The hydrogen-sensing property of new type field-effect gas sensor device was studied. The device had an FET structure based on porous silicon. Adsorption of molecules into the porous silicon strongly changes the electrical properties of the transistor structure. Interestingly, the current variation induced by Hydrogen gas vapour that is the sensitivity of the sensor can be electrically tuned by changing polarization voltage. It has been shown that the device exhibited excellent hydrogen-sensing characteristic at room temperature. The results show that current-voltage characteristics are modified by the gas reactivity on the PS surface. In conclusion, the FET gas sensor based on porous silicon shows a rapid response to low concentration of the hydrogen gas at room temperature.