Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application

Abstract:

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We investigate the application of porous silicon (PS) in the field of the photovoltaic. In first step we realise a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer onto a low cost substrate. During high temperature onto hydrogenation treatments of to passivate the structure and epitaxy in liquid phase, porous silicon is recristallized partially. In this work, a characterization by scanning electron microscopy informs us about the morphology of these porous layers.

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Periodical:

Edited by:

N.Gabouze

Pages:

269-273

DOI:

10.4028/www.scientific.net/MSF.609.269

Citation:

A. Ould-Abbas et al., "Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application", Materials Science Forum, Vol. 609, pp. 269-273, 2009

Online since:

January 2009

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$35.00

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