Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application

A. Ould-Abbas; M. Madani; N.E. Chabane Sari

doi:10.4028/www.scientific.net/MSF.609.269

Paper Titles

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature
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Functionalization of ISE Sensor for Metal Ion Detection
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Adsorption of Dyes and Metal Ions by Acrylamide - Co - Acrylic Acid Hydrogels Synthesized by Gamma Radiation
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A FET Gas Sensor Device Based on Porous Silicon
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Characterization of CN_x Thin Films Synthesized by Laser Ablation Technique
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Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application
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On Topographic Properties of Semiconductor Surfaces and Thin Film Systems
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Photoluminescence of Passivated a-Si:H
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Synthesis and Characterization of Porous Materials Containing Modified Cellulose by β-Cyclodextrin for the Application in Processing Industrial Liquid Waste
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HomeMaterials Science ForumMaterials Science Forum Vol. 609Morphological Characterization of Sacrificial...

Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application

Abstract:

We investigate the application of porous silicon (PS) in the field of the photovoltaic. In first step we realise a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer onto a low cost substrate. During high temperature onto hydrogenation treatments of to passivate the structure and epitaxy in liquid phase, porous silicon is recristallized partially. In this work, a characterization by scanning electron microscopy informs us about the morphology of these porous layers.