Photoluminescence of Passivated a-Si:H

Róbert Brunner; Hikaru Kobayashi; M. Kučera; Masao Takahashi; Jaroslav Rusnák; Emil Pinčík

doi:10.4028/www.scientific.net/MSF.609.281

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HomeMaterials Science ForumMaterials Science Forum Vol. 609Photoluminescence of Passivated a-Si:H

Photoluminescence of Passivated a-Si:H

Abstract:

. Experimental results relating to evolution of the a-Si:H photoluminescence spectra are presented. The investigated samples were prepared by deposition of thin a-Si:H layer on glass substrate. In the a-Si:H surface region very thin oxide layer was prepared by wet chemical oxidation in 40% nitric acid solution. The defect states of amorphous silicon layer and its interface with oxide were passivated in HCN aqueous solutions. The attention was focused on decomposition procedure of photoluminescence spectra observed at 6 K. The results confirm the existence of several structurally different phases inside of the a-Si:H amorphous matrix. PACS: 78.55.-m, 78.55.Qr, 81.05.Gc