Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Abstract:

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Boron-doped hydrogenated amorphous silicon (a-Si:H(B)) thin films have been prepared by DC magnetron sputtering technique under argon and hydrogen mixture. The films were deposited at various hydrogen pressures between 0 and 9 10-5 mbar. The boron concentration estimated from Secondary Ion Mass Spectrometry (SIMS) analysis was found to be around 1.5 1021 cm-3 for all samples. Their physico-chemical, optical and electrical properties are investigated. The physico-chemical properties were studied by infrared absorption measurements. The bonded hydrogen content in the films is then determined using the absorption band of stretching mode. The optical transmission measurements show an increase of the static refractive index and a decrease of optical gap value when hydrogen pressure increases. The dark-conductivity and the photo-conductivity measurements according to the temperature are also reported. We have observed the decreasing of dark-conductivity when hydrogen pressure increases. A slight sensitivity of light was observed for the film deposited at the highest hydrogen pressure. The dark-conductivity was affected by annealing temperature for the whole of the films through its increase in the annealing temperature region 200-350°C.

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Periodical:

Edited by:

N.Gabouze

Pages:

81-85

DOI:

10.4028/www.scientific.net/MSF.609.81

Citation:

N. Khelifati et al., "Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties", Materials Science Forum, Vol. 609, pp. 81-85, 2009

Online since:

January 2009

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$35.00

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