Photoluminescence and Structural Properties of ZnO Films Deposited on Si Substrates by Chemical Spray Deposition

Samira Sali; R. Tala-Ighil; S. Kermadi; M. Boumaour; Mohamed Kechouane

doi:10.4028/www.scientific.net/MSF.609.111

Paper Titles

Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties
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Structural Properties of Al-Cu Thin Films after Heat Treatment
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Comparative Study between Two Polymers of Arylene-Vinylene Units: Electrochemical, Spectroscopic Characterization and Resistivity Measurements
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Space Resolved Optical Emission Spectroscopy During Deposition of Ba_xSr_1-xTiO₃ Thin Films by Double Hollow Cathode Plasma Jet System
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Photoluminescence and Structural Properties of ZnO Films Deposited on Si Substrates by Chemical Spray Deposition
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Deposition of Titanium Nitride Thin Films onto Silicon by RF Reactive Magnetron Sputtering
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Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions
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Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing
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Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions
p.133

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Photoluminescence and Structural Properties of ZnO Films Deposited on Si Substrates by Chemical Spray Deposition

Abstract:

The structure and photoluminescence (PL) of ZnO films deposited on Si (111) substrates by chemical spray deposition using aqueous solution of zinc acetate [Zn (CH3 CO2)2 , 2H2O] was investigated. It was found that these properties depend strongly on growth temperature and grain size. The samples grown at the optimum deposition conditions can generate stronger luminescence. It was revealed by X-ray diffraction that the preferred orientation of poly-crystals is along C-axis, with hexagonal wurtzite structure. PL spectroscopy results shows an evident ultra-violet (UV) emission observed near 380 nm with a broad low intensity band centred at 430 nm. The band was reported as being caused by the defects in the grain boundaries of ZnO. Under optimum deposition conditions a low resistivity and a high optical transmittance of the order of 2.8×10−4 Ω cm and 90%, respectively, were obtained.