Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions

Jaroslav Rusnák; Michal Ružinský; Kentaro Imamura; Taketoshi Matsumoto; Miloslav Štefečka; Masao Takahashi; Hikaru Kobayashi; Emil Pinčík

doi:10.4028/www.scientific.net/MSF.609.123

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Space Resolved Optical Emission Spectroscopy During Deposition of Ba_xSr_1-xTiO₃ Thin Films by Double Hollow Cathode Plasma Jet System
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Photoluminescence and Structural Properties of ZnO Films Deposited on Si Substrates by Chemical Spray Deposition
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Deposition of Titanium Nitride Thin Films onto Silicon by RF Reactive Magnetron Sputtering
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Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions
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Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing
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Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions
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Formation of Rough TiO₂ Thin Films on Glass and Porous Silicon by Sol-Gel Method
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Study of Unsupported and Al₂O₃ or SiO₂-Supported Nickel Molybdate for Oxireforming of Ethane
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HomeMaterials Science ForumMaterials Science Forum Vol. 609Investigation of Deep Interface Traps in Very-Thin...

Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions

Abstract:

An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.