Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions

Abstract:

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Experimental analysis of current –voltage and capacitance-voltage characteristics of n-ZnO/p-Si (100) heterostructures were presented. Undoped and In-doped ZnO films were deposited by the simple ultrasonic spray method on p-Si substrates (100) at varied substrate temperatures from 200 to 400°C. The structural and optical properties of ZnO films were investigated using X-ray diffraction (XRD) and transmission spectra respectively. The electrical conductivity is calculated from transport measurement in a two probes coplanar structure. It is found that the doped ZnO: In films have higher (002) diffraction peak than undoped ZnO. All films exhibit a high transparency about 85%. The maximum conductivity is observed at 350°C for doped films but increases with substrate temperature for undoped ones. Current–voltage (I-V) characteristics of all n-ZnO/p-Si heterojunctions exhibit non linear characteristics with a small current leakage in the reverse voltage. The obtained device shows a barrier height in the order of 0.65 eV, this is consistent with the theoretical value 0.67eV. The capacitance increases with increasing reverse bias in an approximately linear 1/C2-V relationship.

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Periodical:

Edited by:

N.Gabouze

Pages:

133-137

DOI:

10.4028/www.scientific.net/MSF.609.133

Citation:

N. Zebbar et al., "Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions ", Materials Science Forum, Vol. 609, pp. 133-137, 2009

Online since:

January 2009

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$35.00

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