The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Hao Liu; Wei Jia Zhang; Shi Liang Jia; Wei Guo; Jin Wu

doi:10.4028/www.scientific.net/MSF.610-613.367

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The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity
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HomeMaterials Science ForumMaterials Science Forum Vols. 610-613The Study of Boron-Doped Nanocrystalline Silicon...

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Abstract:

Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.