The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Abstract:

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Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.

Info:

Periodical:

Materials Science Forum (Volumes 610-613)

Main Theme:

Edited by:

Zhong Wei Gu, Yafang Han, Fu Sheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou

Pages:

367-371

DOI:

10.4028/www.scientific.net/MSF.610-613.367

Citation:

H. Liu et al., "The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity", Materials Science Forum, Vols. 610-613, pp. 367-371, 2009

Online since:

January 2009

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Price:

$35.00

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