Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices

Jin She Yuan; Ming Yue Wang; Guo Hao Yu

doi:10.4028/www.scientific.net/MSF.610-613.353

Paper Titles

Effect of TiO₂ Nanoparticle on Thermal and Tensile Behavior of Polypropylene/ Polylactic Acid Composite
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Fabrication of Plasma Treated Nano Zinc Oxide/PP/PLA Composites Filaments Using Melt Spinning
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Bioavailability and Speciation of Cd, Pb, Cu, and Zn in Sewage Irrigated Soils in the Southeastern Suburbs of Beijing
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Study on Properties of Quasi Solid Polymer Electrolyte Based on PVdF-PMMA Blend for Dye-Sensitized Solar Cells
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Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices
p.353

Experimental Study on Solar Photovoltaic System with Compound Parabolic Concentrator
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O₂ Reduction Reaction Activity of MN₄ Spherical Polymeric Cobalt Porphyrin
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The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity
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Influences of Stabilizers on the Microstructure and Properties of Sol-Gel Tin Doped Indium Oxide Thin Films
p.372

HomeMaterials Science ForumMaterials Science Forum Vols. 610-613Low-Temperature Plasma Deposition of Diamond-Like...

Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices

Abstract:

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.