Characterisation of Ti/Al Multilayered Structures with Slow Positron Beams Applying a Simplified Positron Depth Distribution Model

Marco Duarte Naia; Paulo M. Gordo; Orlando M.N.D. Teodoro; Adriano P. de Lima; Augusto M.C. Moutinho

doi:10.4028/www.scientific.net/MSF.636-637.1097

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HomeMaterials Science ForumMaterials Science Forum Vols. 636-637Characterisation of Ti/Al Multilayered Structures...

Characterisation of Ti/Al Multilayered Structures with Slow Positron Beams Applying a Simplified Positron Depth Distribution Model

Abstract:

In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.

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Materials Science Forum (Volumes 636-637)

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1097-1101

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https://doi.org/10.4028/www.scientific.net/MSF.636-637.1097

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January 2010

Authors:

Marco Duarte Naia, Paulo M. Gordo, Orlando M.N.D. Teodoro, Adriano P. de Lima, Augusto M.C. Moutinho

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Interface, Multilayer, SIMS, Slow Positron, Thin Film

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